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| PNP SILICON PLANAR TRANSISTOR 2N4036 TO-39 Boca Semiconductor Corp. BSC http://www.bocasemi.com General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCEO 65 Collector -Emitter Voltage VCBO 90 Collector -Base Voltage VEBO 7.0 Emitter Base Voltage IB 0.5 Base Current IC 1.0 Collector Current -Continuous PD 5.0 Power Dissipation @ Tc=25 deg C 28.6 Linear Derating Factor PD 1.0 Power Dissipation @ Ta=25 deg C 5.72 Linear Derating Factor Tj, Tstg -65 to +200 Operating & Storage Junction Temperature Range TL 230 Lead Temperature 1/16" from Case for 10 Seconds Thermal Resistance Rth (j-c) 35 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=10mA, IB=0 Collector -Emitter Voltage VCBO IC=100uA, IE=0 Collector -Base Voltage ICEX VCE=85V, VBE=1.5V Collector Cut off Current ICBO VCB=90V, IE=0 IEBO VBE=7V, IC=0 Emitter Cut off Current hFE 0.1mA, VCE=10V DC Current Gain IC=150mA, VCE=2V IC=150mA, VCE=10V IC=500mA, VCE=10V VCE(sat) IC=150mA, IB=15mA Collector -Emitter (sat) Voltage VBE(sat) IC=150mA, IB=15mA Base -Emitter (sat) Voltage Small- Signal Characteristics lhfel IC=50mA,VCE=10V, f=20MHz Current Gain- High Frequency Switching Characteristics Rise time Sorage time Fall time Turn-on time Turn-off time UNIT V V V A A W mW/deg C W mW/deg C deg C deg C deg C/W MIN 65 90 20 20 40 20 3.0 TYP MAX 0.1 1.0 10 200 140 0.65 1.4 UNIT V V mA uA uA - V V - tr ts tf ton toff IB1=15mA,IC=150mA, VCE=30V IB2=15mA,IC=150mA, VCE=30V IB2=15mA,IC=150mA, VCE=30V IC=150mA, VCE=30V, IB1=IB2= 15mA - 70 600 100 110 700 ns ns ns ns ns Continental Device India Limited Data Sheet Page 1 of 2 TO-39 Metal Can Package A B D G 2 1 3 All dimensions are in mm DIM A B C D E F G H J K L M IN MAX 8.50 9.39 7.74 8.50 6.09 6.60 0.40 0.53 -- 0.88 2.41 2.66 4.82 5.33 0.71 0.86 0.73 1.02 12.70 -- 42 DE G 48 DE G E K C L H J 3 2 1 PIN CO NFIG URATION 1. E M ITTE R 2. B A SE 3. C OLLE CTO R F http://www.bocasemi.com |
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